RADIATION-DAMAGE OF SILICON PHOTODETECTORS FOR STAR SENSORS IN SATELLITES

被引:0
|
作者
BRAUNIG, D
WAGEMANN, HG
SPENCKER, A
MEINHARDT, O
机构
来源
ZEITSCHRIFT FUR ANGEWANDTE PHYSIK | 1972年 / 32卷 / 5-6期
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:313 / +
页数:1
相关论文
共 50 条
  • [31] ELECTRON RADIATION-DAMAGE IN DIFFUSED SILICON SOLAR CELLS
    HUSSAIN, LA
    NORTHROP, DC
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (09) : 1104 - 1107
  • [32] RADIATION-DAMAGE TO SILICON BY HIGH-ENERGY PARTICLES
    DMITRIEV, VM
    KOSMACH, VF
    MOLCHANOV, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 1049 - 1050
  • [33] RADIATION-DAMAGE
    HOBBS, LW
    AMERICAN CERAMIC SOCIETY BULLETIN, 1977, 56 (03): : 295 - 295
  • [34] RADIATION-DAMAGE
    THOMPSON, MW
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (64): : 403 - 410
  • [35] OPTICAL STUDIES OF RADIATION-DAMAGE IN NEUTRON TRANSMUTATION DOPED SILICON
    FUKUOKA, N
    CLELAND, JW
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 51 (3-4): : 215 - 222
  • [36] RADIATION-DAMAGE AND MINORITY-CARRIER LIFETIME IN CRYSTALLINE SILICON
    BHORASKAR, VN
    DHOLE, SD
    SINGH, S
    JAHAGIRDAR, SM
    SRINIVAS, KS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 62 (01): : 99 - 102
  • [37] CARBON-RELATED RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON
    DAVIES, G
    OATES, AS
    NEWMAN, RC
    WOOLLEY, R
    LIGHTOWLERS, EC
    BINNS, MJ
    WILKES, JG
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (06): : 841 - 855
  • [38] FIELD OXIDE RADIATION-DAMAGE MEASUREMENTS IN SILICON STRIP DETECTORS
    LAAKSO, M
    SINGH, P
    SHEPARD, PF
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 327 (2-3): : 517 - 522
  • [39] ANNEALING THE DI-CARBON RADIATION-DAMAGE CENTER IN SILICON
    DAVIES, G
    KUN, KT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (04) : 327 - 330
  • [40] THE INFLUENCE OF ELECTRIC-FIELD ON THE FORMATION OF RADIATION-DAMAGE IN SILICON
    BOLDYREV, SN
    VYATKIN, AF
    MORDKOVICH, VN
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1988, 105 (3-4): : 155 - 158