A GERMANIUM N-P-N ALLOY JUNCTION TRANSISTOR

被引：4
|
作者：
JENNY, DA
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1953年 / 41卷 / 12期
关键词：
D O I：
10.1109/JRPROC.1953.274357
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1728 / 1734
页数：7
相关论文
共 50 条
  • [21] Performance Analysisof Junction-Less Double Gate n-p-n Impact Ionization MOS Transistor (JLDG n-IMOS)
    Chauhan, Manvendra Singh
    Chauhan, R. K.
    INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, MATERIALS AND APPLIED SCIENCE, 2018, 1952
  • [22] Cost Effective Fabrication and Current-Voltage Characteristics of ZnO Homojunction Based n-p-n Bipolar Junction Transistor
    Sil, I.
    Wakankar, A.
    Gayakwad, A.
    Mishra, S.
    Manjuladevi, V.
    Gupta, R. K.
    Bhattacharyya, P.
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (09) : 1420 - 1423
  • [23] ISOLATED VERTICAL N-P-N TRANSISTOR IN AN N-WELL CMOS PROCESS.
    Zeitzoff, Peter M.
    Anagnostopoulos, Constantine N.
    Wong, Kwok Y.
    Brandt, Brian P.
    IEEE Journal of Solid-State Circuits, 1984, SC-20 (02) : 489 - 494
  • [24] CHANNELS IN N-P-N JUNCTION TRANSISTORS - NEW RESULTS AND A PROPOSED MODEL
    KINGSTON, RH
    PHYSICAL REVIEW, 1954, 94 (05): : 1416 - 1416
  • [25] Effects of band gap opening on an n-p-n bilayer graphene junction
    Saisa-ard, Chaipattana
    Tang, I. Ming
    Hoonsawat, Rassmidara
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 43 (05): : 1061 - 1064
  • [26] OPEN-BASE BREAKDOWN IN DIFFUSED N-P-N JUNCTION TRANSISTORS
    KENNEDY, DP
    OBRIEN, RR
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1965, 18 (02) : 133 - +
  • [27] ELECTRICAL-PROPERTIES OF I2L N-P-N TRANSISTOR
    EVANS, SA
    HERMAN, JM
    SLOAN, BJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (10) : 1192 - 1194
  • [28] SOME PROPERTIES OF N-P-N STRUCTURES BASED ON GOLD-DOPED GERMANIUM
    AVERYANOVA, MM
    VARLAMOV, IV
    SONDAEVS.IA
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (06): : 775 - +
  • [29] INTEGRATED 3-D MAGNETIC SENSOR BASED ON AN N-P-N TRANSISTOR
    KORDIC, S
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 196 - 198
  • [30] CURRENT TRANSPORT MECHANISM AT THE EMITTER-BASE JUNCTION OF AN N-P-N GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTOR PREPARED BY MBE
    REZAZADEH, AA
    MORGAN, DV
    MAWBY, PA
    KERR, TM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 947 - 949
12345