共 50 条
- [1] FORMATION OF DISORDERED LAYERS IN ION-BOMBARDMENT OF CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1410 - 1411
- [2] EXCITATION OF MOLECULES FORMED BY ION-BOMBARDMENT OF SURFACES NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3): : 465 - 469
- [6] RADIATION ANNEALING OF DEFECTS FORMED BY ION-BOMBARDMENT OF CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (09): : 1588 - 1589
- [7] INHOMOGENEITY OF AN AMORPHOUS LAYER FORMED BY ION-BOMBARDMENT OF A SEMICONDUCTOR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (01): : 108 - 110
- [8] OPTICAL PROPERTIES OF SI AND GE LAYERS DISORDERED BY ION-BOMBARDMENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2083 - +
- [9] STRUCTURE MODIFICATION BY ION-BOMBARDMENT DURING DEPOSITION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 528 - &