共 50 条
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- [22] ENERGY-LEVELS OF PHOSPHORUS AND BORON PAIRS IN AMORPHOUS-SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1335 - 1336
- [23] ENERGY-LEVELS OF INTRINSIC AND EXTRINSIC STACKING-FAULTS IN SILICON PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 108 (01): : 97 - 102
- [24] POSITIONS OF ENERGY-LEVELS OF ION-IMPLANTED IMPURITIES IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1340 - 1341
- [25] ENERGY-DEPENDENCE OF DEFECT ENERGY-LEVELS IN ELECTRON-IRRADIATED SILICON REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (03): : 481 - 484
- [29] STRUCTURE AND ENERGY-LEVELS OF THE GLIDE 60-DEGREES PARTIAL IN SILICON PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 101 (02): : 585 - 589
- [30] CALCULATION OF ENERGY-LEVELS OF A NEUTRAL VACANCY AND OF SELF-INTERSTITIALS IN SILICON JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12): : 2319 - 2330