HIGH TEMPERATURE BEHAVIOUR AND LONG-TERM STABILITY OF LITHIUM DRIFTED SILICON SURFACE-BARRIER DETECTORS

被引：9

作者：

TUZZOLIN.AJ

PERKINS, MA

KRISTOFF, J

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1967年 / 48卷 / 01期

关键词：

D O I：

10.1016/0029-554X(67)90458-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：33 / &

共 50 条

[21] PREPARATION CHARACTERISTICS AND APPLICATIONS OF HIGH-VOLTAGE SILICON SURFACE-BARRIER DETECTORS
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[22] HIGH-RESOLUTION 5000U SILICON SURFACE-BARRIER DETECTORS
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[23] LITHIUM DRIFTED SILICON SURFACE BARRIER DETECTOR WITH GUARD RING
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[24] FABRICATION OF LITHIUM-DRIFTED SILICON DETECTORS BY CONSTANT TEMPERATURE METHOD
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[25] SILICON SURFACE-BARRIER DE/DX-TYPE DETECTORS
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[28] STUDY OF SURFACE EFFECTS IN THICK LITHIUM DRIFTED SILICON RADIATION DETECTORS
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[29] FIELD-STRENGTH RELATIONSHIPS FOR SILICON SURFACE-BARRIER DETECTORS
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[30] A DIRECT OBSERVATION OF PLASMA DELAY IN SILICON SURFACE-BARRIER DETECTORS
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