SOL-GEL TIO2 FILMS ON SILICON SUBSTRATES

被引：101
|
作者：
VOROTILOV, KA
ORLOVA, EV
PETROVSKY, VI
机构：
[1] Moscow Institute of Radioengineering, Electronics and Automation, Moscow
来源：
THIN SOLID FILMS | 1992年 / 207卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(92)90120-Z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Titanium dioxide (TiO2) thin films have been prepared on silicon substrates by the sol-gel method. The properties of the resultant films are process dependent. The effects of solution content (type of titanium alkoxide, type of solvent, equivalent oxide concentration, [H2O]/[Ti(OR)4] ratio), gas moisture during deposition and heat treatment temperature on the film properties is discussed. The X-ray diffraction spectra, optical and electrical properties and TiO2-Si interface quality have been studied.
引用
收藏
页码：180 / 184
页数：5
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