GAAS-ALGAAS HALF-RING LASER FABRICATED BY DEEP ZN DIFFUSION

被引：4
|
作者：
KAWAGUCHI, H [1 ]
KAWAKAMI, T [1 ]
机构：
[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 12期
关键词：
D O I：
10.1143/JJAP.16.2281
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2281 / 2282
页数：2
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