GAAS-ALGAAS HALF-RING LASER FABRICATED BY DEEP ZN DIFFUSION

被引：4

作者：

KAWAGUCHI, H ^{[1
]}

KAWAKAMI, T ^{[1
]}

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 12期

关键词：

D O I：

10.1143/JJAP.16.2281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2281 / 2282

页数：2

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