3-TERMINAL CID AS RANDOM-ACCESS MEMORY CELL

被引：3

|

作者：

KOCH, R

HERBST, H

JESPERS, P

机构：

[1] SIEMENS AG,RES LAB,D-8000 MUNICH 80,FED REP GER

[2] CATHOLIC UNIV LOUVAIN,B-1348 LOUVAIN LA NEUVE,BELGIUM

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1977年 / 12卷 / 05期

关键词：

D O I：

10.1109/JSSC.1977.1050950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：534 / 536

页数：3

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