INJECTION-ENHANCED ANNEALING IN ELECTRON-IRRADIATED ALUMINUM DOPED SILICON

被引：0
|
作者：
TROXELL, JR [1 ]
WATKINS, GD [1 ]
机构：
[1] LEHIGH UNIV,BETHLEHEM,PA 18015
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1978年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：214 / 214
页数：1
相关论文
共 50 条
  • [21] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON
    JONES, CE
    JOHNSON, ES
    COMPTON, WD
    NOONAN, JR
    STREETMA.BG
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5402 - 5410
  • [22] SHORT-TERM CHARGE ANNEALING IN ELECTRON-IRRADIATED SILICON DIOXIDE
    SIMONS, M
    HUGHES, HL
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 106 - +
  • [23] Annealing kinetics of boron-containing centers in electron-irradiated silicon
    O. V. Feklisova
    N. A. Yarykin
    J. Weber
    Semiconductors, 2013, 47 : 228 - 231
  • [24] ILLUMINATION INDUCED ANNEALING IN ELECTRON-IRRADIATED P-TYPE SILICON
    NAKASHIMA, K
    PHYSICS LETTERS A, 1973, A 42 (07) : 533 - 534
  • [25] PIEZORESISTIVITY IN ELECTRON-IRRADIATED SILICON
    LOGGINS, CD
    LITTLEJO.MA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (06): : 765 - &
  • [26] ANNEALING OF VACANCIES IN ELECTRON-IRRADIATED SILVER
    HAUTOJARVI, P
    JOHANSSON, J
    VEHANEN, A
    YLIKAUPPILA, J
    GIRARD, P
    MINIER, C
    JOURNAL OF PHYSICS F-METAL PHYSICS, 1981, 11 (07): : 1337 - 1345
  • [27] ANOMALOUS LOW-TEMPERATURE ANNEALING OF ELECTRON-IRRADIATED LITHIUM-DOPED SILICON SOLAR-CELLS
    BRILLIANTOV, NV
    RUDENKO, AI
    SHCHERBAKOV, YV
    ZVEREV, VV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (02): : K155 - K158
  • [28] INTERSTITIAL CLUSTERS IN ELECTRON-IRRADIATED ALUMINUM
    KIRITANI, M
    YOSHIDA, N
    TAKATA, H
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (03) : 720 - 729
  • [29] DISLOCATION DAMPING IN ELECTRON-IRRADIATED ALUMINUM
    SEIFFERT, SL
    SOSIN, A
    SIMPSON, HM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 480 - 480
  • [30] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON - ILLUMINATION AND FLUENCE DEPENDENCE
    KIMERLING, LC
    CARNES, CP
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3548 - +
12345