CIRCUIT SIMULATION OF RESONANT TUNNELING DOUBLE-BARRIER DIODE

被引：10
|
作者：
LIU, HC
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期
关键词：
D O I：
10.1063/1.341204
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：4792 / 4794
页数：3
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