Electro-optic properties of sol-gel derived PZT and PLZT thin films

被引:27
|
作者
Teowee, G
Simpson, JT
Zhao, TJ
Mansuripur, M
Boulton, JM
Uhlmann, DR
机构
[1] Donnelly Corporation 4545 East Fort Lowell, Tucson
[2] IBM Corporation, Tucson, AZ 85744
[3] Optical Science Center University of Arizona, Tucson
[4] Arizona Materials Laboratories, University of Arizona, Tucson
关键词
D O I
10.1016/0167-9317(95)00171-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ferroelectric(FE) films exhibit interesting electro-optic (EO) properties and are utilized in devices used for second harmonic generation, spatial light modulators and optical switches. These films typically yield large values of linear and quadratic electro-optic coefficients. Solgel derived FE films namely PZT 53/47 and PLZT 28/0/100 were prepared on conductive glass substrates. 0.5M precursor solutions based on the appropriate stoichiometric amounts of lead acetate, La nitrate and Ti/Zr alkoxides were refluxed for 1 hour and later spincoated on the substrates. They were then fired to 600C to crystallize them into single phase perovskite films. Top Au/Pd electrodes were deposited to form the top contacts for the capacitors. The refractive indices, extinction coefficients, linear and quadratic coefficients of the films were obtained using multiangle reflection ellipsometry. These parameters were then used to calculate the linear and quadratic electro-optic coefficients of the films. The quadratic EO coefficients of PLZT 28/0/100 and PZT 53/47 films were measured to be 0.07 and 0.38 x 10(-16) m(2)/V-2 respectively while the linear electrooptic coefficients of PLZT 28/0/100 and PZT 53/47 were found to be 59 and 315 pm/V respectively, with the r(eff) value for PZT 53/47 the highest among reported ferroelectric films in literature.
引用
收藏
页码:327 / 330
页数:4
相关论文
共 50 条
  • [1] Characterization of sol-gel derived PZT and PLZT thin films
    Kurchania, R
    Milne, SJ
    [J]. ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 447 - 450
  • [2] Drying temperature effects on microstructure, electrical properties and electro-optic coefficients of sol-gel derived PZT thin films
    Lee, C
    Spirin, V
    Song, H
    No, K
    [J]. THIN SOLID FILMS, 1999, 340 (1-2) : 242 - 249
  • [3] Sol-gel synthesis of PZT thin films on FTO glass substrates for electro-optic devices
    Shoghi, Ali
    Abdizadeh, Hossein
    Shakeri, Amid
    Golobostanfard, Mohammad Reza
    [J]. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2020, 93 (03) : 623 - 632
  • [4] Electrical properties of sol-gel processed PZT and PLZT thin films
    Vijayaraghavan, Chariar M.
    Goel, T.C.
    Mendiratta, R.G.
    [J]. Proceedings - International Symposium on Electrets, 1999, : 477 - 480
  • [5] Structural evolution, dielectric and electro-optic properties of sol-gel derived potassium titanyl phosphate thin films
    Zhang, JP
    Lee, BI
    Wang, FL
    [J]. JOURNAL OF MATERIALS SCIENCE, 2000, 35 (19) : 4931 - 4935
  • [6] Structural evolution, dielectric and electro-optic properties of sol-gel derived potassium titanyl phosphate thin films
    Jianping Zhang
    Burtrand. I. Lee
    Feiling Wang
    [J]. Journal of Materials Science, 2000, 35 : 4931 - 4935
  • [7] Pyroelectric properties of various sol-gel derived PLZT thin films
    McCarthy, KC
    McCarthy, FS
    Teowee, G
    Bukowski, TJ
    Alexander, TP
    Uhlmann, DR
    [J]. INTEGRATED FERROELECTRICS, 1997, 17 (1-4) : 377 - 385
  • [8] Electro-optic characterization of sol-gel derived (Pb,La)TiO3 thin films
    Koo, J
    Bae, BS
    Kim, DY
    Kwun, SI
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 : S1431 - S1433
  • [9] Sol–gel synthesis of PZT thin films on FTO glass substrates for electro-optic devices
    Ali Shoghi
    Hossein Abdizadeh
    Amid Shakeri
    Mohammad Reza Golobostanfard
    [J]. Journal of Sol-Gel Science and Technology, 2020, 93 : 623 - 632
  • [10] The effects of solvent on the properties of sol-gel derived PZT thin films
    Jung, JY
    Kim, WS
    Park, HH
    Kim, TS
    [J]. FERROELECTRICS, 2001, 263 (1-4) : 1627 - 1634