NONLINEAR ACOUSTOELECTRONIC PHENOMENA IN LAYERED STRUCTURES

The dynamic properties of nonlinear acoustoelectronic interactions over a wide range of surface acoustic wave (SAW) power for the layered Al/ZnO/SiO2/Si were investigated. The existence of a very strong nonlinear dispersion and attenuation of the SAW as well as a possibility of the system's self-transparency and the saturation of the convolution and transverse acoustoelectric voltage (TAV) signal power are pointed out. In the case of inverse-type semiconductor surface conductivity, anomolous change in sign, large amplitude and the threshold character of transverse acoustoelectric voltage are observed. The results of the investigations of the discovered acoustoelectronic (AE) bi-and multistability under conditions of strong nonlinearity including changing external influences are considered. It is noted that there is a close connection between nonlinear AE phenomena and electronic processes on the surface of the semiconductor.