Hysteresis of acoustoelectronic phenomena in a layered piezoelectric-semiconductor structure

被引：0
|
作者：
V'yun, V.A. [1 ]
Yakovkin, I.B. [1 ]
机构：
[1] USSR Acad of Sciences, Russia
来源：
Russian Ultrasonics | 1988年 / 18卷 / 02期
关键词：
Piezoelectric Materials--Thin Films - Semiconductor Materials - Surface Waves;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results are given of an experimental study of hysteresis which has been found in the acoustoelectronic interaction of surface acoustic waves in a layered structure of a piezoelectric film (ZnO) and a semiconductor (Si).
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页码：99 / 104
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