LOW-NOISE CHARACTERISTICS OF A GAAS ALGAAS MULTIPLE-QUANTUM-WELL SEMICONDUCTOR-LASER AMPLIFIER

被引：12
|
作者：
SAITOH, T [1 ]
SUZUKI, Y [1 ]
TANAKA, H [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, APPL ELECTR LABS, TOKYO 180, JAPAN
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 11期
关键词：
D O I：
10.1109/68.63224
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low noise feature is experimentally demonstrated in a quantum-well laser amplifier. The noise figure of a GaAs-AlGaAs traveling-wave laser amplifier at a 20 dB signal gain is measured as 4.6 dB. This is the smallest value reported for semiconductor laser amplifiers. The signal gain of 20 dB is obtained at a low bias current of 23.5 mA.
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页码：794 / 796
页数：3
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