AN ANALYSIS OF RESONANT MAGNETOTUNNELING IN THE DOUBLE-BARRIER HETEROSTRUCTURE

被引:1
|
作者
WANG, XH [1 ]
PENG, JP [1 ]
LI, TZ [1 ]
GU, SW [1 ]
机构
[1] XIANGTAN UNIV,DEPT PHYS,XIANGTAN 411105,PEOPLES R CHINA
关键词
D O I
10.1088/0253-6102/23/2/155
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study resonant magnetotunneling in the double-barrier heterostructure in the sequential tunneling picture. The effects arising from charge buildup in the well are considered by assuming that the quasibound energy in the well varies linearly with the applied bias. Under appropriate approximations, the tunneling current density and the corresponding differential conductance are derived analytically. The results for the peak positions in differential conductance and the threshold current position are consistent with experiments.
引用
收藏
页码:155 / 158
页数:4
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