A RHEED AND AFM STUDY OF THE EPITAXIAL-GROWTH OF PD ON PD(001)

被引:0
|
作者
WILD, J [1 ]
MATOLIN, V [1 ]
ROBRIEUX, B [1 ]
BRUNA, JC [1 ]
GILLET, MF [1 ]
SICHOVA, H [1 ]
机构
[1] CHARLES UNIV,DEPT SEMICOND PHYS,CR-12116 PRAGUE 2,CZECH REPUBLIC
关键词
D O I
10.1007/BF01845954
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The homoepitaxial growth of Pd on a Pd(001) single crystal surface was studied by the RHEED and AFM methods. The values of surface width obtained by both the methods were compared to each other. Generally, we observed that at the room temperature and at the deposition rate of 1nm/min the surface roughness increases with the mass thickness of the deposited layer. Up to the mass thickness of 10 nm the values of surface width sigma(0) calculated on the basis of measurements carried out by the RHEED and AFM methods are in relatively good mutual agreement. If the values of the mass thickness are higher than 10 nm, surface polycrystalline phase develops.
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页码:777 / 784
页数:8
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