MEV ION-BEAM ANNEALING OF SEMICONDUCTOR STRUCTURES

被引：16
|
作者：
WILLIAMS, JS
RIDGWAY, MC
ELLIMAN, RG
DAVIES, JA
JOHNSON, ST
PALMER, GR
机构：
[1] Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, Canberra
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期
基金：
澳大利亚研究理事会;
关键词：
D O I：
10.1016/0168-583X(91)96240-L
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.
引用
收藏
页码：602 / 606
页数：5
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