NEW MAGNETORESISTIVE SENSORS - ENGINEERING AND APPLICATIONS

被引：6
|
作者：
ROTTMANN, F [1 ]
DETTMANN, F [1 ]
机构：
[1] UNIV JENA,SEKT PHYS,O-6900 JENA,GERMANY
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 27卷 / 1-3期
关键词：
D O I：
10.1016/0924-4247(91)87084-G
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The magnetoresistive effect within thin anisotropic layers of ferromagnetic materials has been known for a long time. A new sensor layout and an appropriate selection of materials allows the hysteresis to be drastically reduced and the operation temperature to be increased up to 200-degrees-C. Due to the short reaction times in the nanosecond field and their extreme sensitivity, magnetoresistive sensors are predestined to locate fast dynamic fields. But static magnetic fields can also be reliably measured with this type of sensor, since the resistance change is carried out in proportion to the field strength and not in proportion to the temporal change of the magnetic induction, as with inductively operated sensors. The typical applications of magnetoresistive sensors are revolution counting at gear wheels, digital or analog contactless distance measurement or remotely operating joysticks.
引用
收藏
页码：763 / 766
页数：4
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