CREEP AND RECOVERY OF SILICON SINGLE-CRYSTALS

被引：25

作者：

TAYLOR, TA

BARRETT, CR

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING | 1972年 / 10卷 / 02期

关键词：

D O I：

10.1016/0025-5416(72)90073-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：93 / &

共 50 条

[31] HORIZONTAL PULLING OF SILICON SINGLE-CRYSTALS
KUDO, B
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 653 - 654
[32] SWIRL DEFECTS IN SILICON SINGLE-CRYSTALS
CHIKAWA, J
YOSHIKAWA, S
[J]. SOLID STATE TECHNOLOGY, 1980, 23 (01) : 65 - 70
[33] CASTING LARGE SILICON SINGLE-CRYSTALS
SCHMID, F
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 436 - 437
[34] PRODUCTION OF SILICON SINGLE-CRYSTALS AND WAFERS
ABE, Y
[J]. DENKI KAGAKU, 1986, 54 (08): : 662 - 666
[35] SILICON DOPING OF GAAS SINGLE-CRYSTALS
MORAVEC, F
STEPANEK, B
SESTAKOVA, V
[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1992, 27 (04) : 477 - 479
[36] EXTENDED DEFECTS IN SILICON SINGLE-CRYSTALS
TIKHONOV, LV
KHARKOVA, GV
GOLUB, TV
[J]. FIZIKA TVERDOGO TELA, 1986, 28 (04): : 1193 - 1194
[37] FOREST DISLOCATION INFLUENCE ON CREEP OF ZINC SINGLE-CRYSTALS
ZAGORUYKO, LN
SOLDATOV, VP
[J]. FIZIKA METALLOV I METALLOVEDENIE, 1980, 50 (02): : 415 - 423
[38] CREEP OF GALLIUM SINGLE-CRYSTALS NEAR FUSING TEMPERATURE
SIDOKHIN, EF
GOLODZE, NA
SIDOKHIN, AF
[J]. FIZIKA METALLOV I METALLOVEDENIE, 1973, 35 (03): : 518 - 522
[39] HIGH-TEMPERATURE CREEP ON KBR SINGLE-CRYSTALS
MONTEMAYOR, J
GOMEZRAMIREZ, R
CARRILLO, E
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 67 - 72
[40] CREEP OF ALUMINUM SINGLE-CRYSTALS AT LOW-TEMPERATURES
BUTT, MZ
FELTHAM, P
[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (03) : 302 - 304