CHARACTERIZATION OF THE SI(111)-GA INTERFACE USING OPTICAL 2ND-HARMONIC GENERATION

被引：2
|
作者：
KELLY, PV
OMAHONY, JD
RASING, T
MCGILP, JF [1 ]
机构：
[1] UNIV DUBLIN TRINITY COLL, DEPT PURE & APPL PHYS, DUBLIN 2, IRELAND
[2] CATHOLIC UNIV NIJMEGEN, MAT RES INST, 6525 ED NIJMEGEN, NETHERLANDS
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷
关键词：
D O I：
10.1088/0953-8984/3/S/031
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Ultra-high-vacuum studies of optical second-harmonic generation (SHG) from well-characterized Si(111)-Ga interfaces in the submonolayer coverage regime are reported. Both intensity and phase measurements of the SH signal have been made. The chi(xxx) and chi(zxx) susceptibility tensor components are shown to have resonant enhancement around a third of a monolayer, for 1064 nm excitation. The origin of this behaviour is discussed in terms of the structure and bonding at the interface.
引用
收藏
页码：S193 / S198
页数：6
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