OPTICAL 2ND HARMONIC-GENERATION FROM THE SI(111)-GA INTERFACE

被引：16
|
作者：
KELLY, PV
OMAHONY, JD
MCGILP, JF
RASING, T
机构：
[1] UNIV DUBLIN TRINITY COLL, DEPT PURE & APPL PHYS, DUBLIN 2, IRELAND
[2] CATHOLIC UNIV NIJMEGEN, MAT RES INST, 6525 ED NIJMEGEN, NETHERLANDS
来源：
APPLIED SURFACE SCIENCE | 1992年 / 56-8卷
关键词：
D O I：
10.1016/0169-4332(92)90270-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The deposition of Ga on clean Si(111) has a strong effect on the optical second harmonic generation from this surface. By measuring both intensity and phase of the SHG signals, a resonant enhancement is observed around 1/3 of a monolayer for excitation with 1064 nm. This enhancement is absent for 634 nm excitation. These observations are related to the electronic structure of the Si-Ga interface.
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页码：453 / 456
页数：4
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