ANNEALING CHARACTERISTICS AND THERMAL-STABILITY OF ELECTRON-BEAM EVAPORATED RUTHENIUM SCHOTTKY CONTACTS TO N-GAAS

被引：16
|
作者：
MYBURG, G
AURET, FD
机构：
[1] Department of Physics, University of Pretoria
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期
关键词：
D O I：
10.1063/1.106567
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality ruthenium Schottky barrier diodes were fabricated on epitaxially grown n-GaAs, by the electron beam evaporation of Ru. Annealing studies were carried out in vacuum and in air. The effective barrier height and the flatband barrier height of the as-deposited Schottky contacts were 0.86 and 0.91 eV, respectively. These barrier heights reached their respective maximum values of 0.93 and 0.96 eV, after annealing at 450-degrees-C in vacuum. The electrical characteristics of a third set of contacts, which was subjected to prolonged (1000 min) annealing at 400-degrees-C in vacuum, showed no measureable signs of degradation.
引用
收藏
页码：604 / 606
页数：3
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