OBSERVATION OF CENTRAL CELL STRUCTURE IN MAGNETO-IMPURITY RESONANCES IN N-TYPE INP

被引：3
|
作者：
NICHOLAS, RJ
STRADLING, RA
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 18期
关键词：
D O I：
10.1088/0022-3719/11/18/009
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：L783 / L787
页数：5
相关论文
共 50 条
  • [41] PROBLEM OF IMPURITY FERROMAGNETISM IN N-TYPE INSB
    GLUZMAN, NG
    SABIRZYANOVA, LD
    TSIDILKOVSKII, IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (10): : 1224 - 1225
  • [42] IMPURITY AUGER RECOMBINATION IN N-TYPE GASB
    AGAEV, VV
    TITKOV, AN
    CHAIKINA, EI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 468 - 469
  • [43] MAGNETORESISTANCE IN IMPURITY CONDUCTION OF N-TYPE GERMANIUM
    YAMANOUCHI, C
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (12) : 1901 - &
  • [44] IONIZED IMPURITY DENSITY IN N-TYPE GAAS
    WOLFE, CM
    STILLMAN, GE
    DIMMOCK, JO
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 504 - &
  • [45] OBSERVATION OF AN ADDITIONAL CYCLOTRON-RESONANCE PEAK DUE TO IMPURITY ELECTRONS IN N-TYPE INSB
    SMIRNOVA, VB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 445 - 446
  • [46] Thermally induced conduction type conversion in n-type InP
    Fung, S.
    Zhao, Y.W.
    Beling, C.D.
    Xu, X.L.
    Sun, N.F.
    Sun, T.N.
    Chen, X.D.
    Journal of Applied Physics, 86 (04):
  • [47] Thermally induced conduction type conversion in n-type InP
    Fung, S
    Zhao, YW
    Beling, CD
    Xu, XL
    Sun, NF
    Sun, TN
    Chen, XD
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) : 2361 - 2363
  • [48] Electrochemical Formation of N-type GaN and N-type InP Porous Structures for Chemical Sensor Applications
    Sato, Taketomo
    Zhang, Xiaoyi
    Ito, Keisuke
    Matsumoto, Satoru
    Kumazaki, Yusuke
    2016 IEEE SENSORS, 2016,
  • [49] PHOTOLUMINESCENCE PROPERTIES AND ELECTRONIC-STRUCTURE OF THE SURFACE OF ANODICALLY OXIDIZED N-TYPE INP
    ANDREEV, VM
    ALLAKHVERDIEV, AM
    IVENTEVA, OO
    KASHKAROV, VM
    RUMYANTSEV, VD
    TEREKHOV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (01): : 66 - 68
  • [50] IMPURITY SCATTERING IN N-TYPE GAAS AND IN DEFORMED N-TYPE GE IN QUANTIZING MAGNETIC-FIELDS
    DRAPAK, LS
    KOROLYUK, SL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (02): : 145 - 147
12345