OBSERVATION OF CENTRAL CELL STRUCTURE IN MAGNETO-IMPURITY RESONANCES IN N-TYPE INP

被引：3

|

作者：

NICHOLAS, RJ

STRADLING, RA

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 18期

关键词：

D O I：

10.1088/0022-3719/11/18/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：L783 / L787

页数：5

相关论文

共 50 条

[1] MAGNETO-IMPURITY RESONANCE IN N-TYPE GERMANIUM
HIROSE, Y
TSUKAHARA, T
HAMAGUCHI, C
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1983, 52 (12) : 4300 - 4305
[2] IMPURITY AVALANCHE BREAKDOWN IN N-TYPE INP LAYERS
OSWALD, J
KAREL, F
PETRICEK, O
SCHMID, N
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : 112 - 115
[3] OBSERVATION OF A METALLIC IMPURITY BAND IN N-TYPE GAAS
ROMERO, D
LIU, S
DREW, HD
PLOOG, K
PHYSICAL REVIEW B, 1990, 42 (05): : 3179 - 3182
[4] INFLUENCE OF ILLUMINATION ON THE IMPURITY POTENTIAL OF COMPENSATED N-TYPE INP CRYSTALS
DAKHNO, AN
EMELYANENKO, OV
LAGUNOVA, TS
KUBRIN, AI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 520 - 523
[5] INFLUENCE OF COMPENSATION ON IMPURITY CONDUCTION IN MODERATELY DOPED N-TYPE INP
DAKHNO, AN
EMELYANENKO, OV
LAGUNOVA, TS
METREVELI, SG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 403 - 406
[6] SHALLOW IMPURITY IMPACT IONIZATION TRANSIENTS IN N-TYPE INP AND GAAS
DARGYS, A
CESNA, A
KUNDROTAS, J
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (02) : 210 - 217
[7] DETERMINATION OF IMPURITY CONCENTRATION IN N-TYPE INP BY A PHOTO-LUMINESCENCE TECHNIQUE
PICKERING, C
TAPSTER, PR
DEAN, PJ
ASHEN, DJ
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 469 - 476
[8] PIEZORESISTANCE IN N-TYPE INP
SAGAR, A
PHYSICAL REVIEW, 1960, 117 (01): : 101 - 101
[9] IONIZED IMPURITY SCATTERING IN N-TYPE GERMANIUM AND N-TYPE SILICON
ITO, R
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (11) : 1604 - &
[10] The W defect in n-type InP
Peshev, VV
Smorodinov, SV
SEMICONDUCTORS, 1996, 30 (06) : 520 - 522

← 1 2 3 4 5 →