STUDY OF NANO-CRYSTALLINE SILICON FILMS

被引：0
|
作者：
HE, YL [1 ]
LIU, XN [1 ]
WANG, ZC [1 ]
CHENG, GX [1 ]
WANG, LC [1 ]
YU, SD [1 ]
机构：
[1] NANJING UNIV,SOLID STATE MICROSTRUCT LAB,NANJING 210008,PEOPLES R CHINA
来源：
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY | 1993年 / 36卷 / 02期
关键词：
NANO-CRYSTALLINE; SILICON; DEPOSITION; MICROSTRUCTURE;
D O I：
暂无
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
By using strong hydrogen dilution of silane in PECVD system and controlling the deposition parameters strictly, we have prepared a-Si:H and nc-Si:H as well as muc-Si:H films respectively. The structural characters of nc-Si: H films detected by means of HREM, Raman and X-ray diffraction spectra are identified as coinciding with the known definition of nanometer solids. The unique electrical and optical properties of nc-Si:H films are considered as the consequence of its novel structures.
引用
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页码：248 / 256
页数：9
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