OCCUPANCY OF DANGLING BOND DEFECTS IN DOPED HYDROGENATED AMORPHOUS-SILICON

被引：33

作者：

STUTZMANN, M ^{[1
]}

JACKSON, WB ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 03期

关键词：

CRYSTALS; -; Defects;

D O I：

10.1016/0038-1098(87)90181-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The occupancy of dangling bond defects in doped hydrogenated amorphous silicon is examined using a combination of electron spin resonance, sub-bandgap absorption, and transport measurements. A corrected value of U equals plus 0. 2 ev ( plus or minus 0. 1 ev) is obtained for the dangling bond correlation energy in state-of-the-art material. The importance of potential fluctuations caused by inhomogeneous defect distributions is demonstrated for the case of boron doping in non-optimized samples.

引用

页码：153 / 157

页数：5

共 50 条

[1] ON THE GENERATION AND ANNEALING OF DANGLING BOND DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
MULLER, G
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[2] EVIDENCE FOR THE DOMINANCE OF CHARGED DANGLING BOND DEFECTS IN THE PHOTODEGRADATION OF HYDROGENATED AMORPHOUS-SILICON
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[3] ROLE OF DANGLING-BOND DEFECTS IN EARLY RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
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[4] INTRINSIC DANGLING-BOND DENSITY IN HYDROGENATED AMORPHOUS-SILICON
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[5] ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON
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[6] DANGLING BOND CREATION IN HYDROGENATED AMORPHOUS-SILICON BY LIGHT-SOAKING
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[7] POTENTIAL FLUCTUATIONS DUE TO INHOMOGENEITY IN HYDROGENATED AMORPHOUS-SILICON AND THE RESULTING CHARGED DANGLING-BOND DEFECTS
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[8] Nature of metastable and stable dangling bond defects in hydrogenated amorphous silicon
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[9] INTERFACIAL NEUTRAL-DANGLING-BOND AND CHARGED-DANGLING-BOND DENSITIES BETWEEN HYDROGENATED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON NITRIDE IN TOP NITRIDE AND BOTTOM NITRIDE STRUCTURES
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[10] KINETICS OF ANNEALING OF DANGLING BONDS IN SPUTTERED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON
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