ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON

被引：0

作者：

KAZANSKII, AG ^{[1
]}

MAO, Y ^{[1
]}

KONG, GL ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT PHYS,119899 MOSCOW,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 06期

关键词：

D O I：

10.1016/0038-1098(94)90783-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si:H film has been investigated. Ac constant photocurrent method has been used to measure the absorption spectrum. The absorption in the defect region increases with the light pulse duration.The analysis of obtained results does not support the existence of a long time relaxation process of dangling-bond states in a-Si:H.

引用

页码：447 / 449

页数：3

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