MULTINANOMETER WAVELENGTH CONVERSION OF 2.5 AND 10 GB-S OPTICAL CHANNELS IN AN INJECTION-LOCKED SEMICONDUCTOR-LASER

被引：6
|
作者：
IANNONE, PP
PRUCNAL, PR
机构：
[1] Princeton University, Department of Electrical Engineering, Princeton
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 08期
关键词：
D O I：
10.1109/68.313072
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have demonstrated multinanometer wavelength conversion of amplitude-shift-keyed 1.5 mu-m optical signals, using cavity-enhanced four-wave mixing in an injection-locked semiconductor laser. 2.5-Gb/s operation was possible with injected signal powers as low as -29.3 dBm, due to the resonant gain of the mixing laser. We have also reported 10-Gb/s operation, the highest data rate at which this method has been demonstrated.
引用
收藏
页码：988 / 991
页数：4
相关论文
共 50 条
  • [41] All optical wavelength conversion and optimum longitudinal mode selection using an injection-locked Fabry-Perot laser diode
    An Yi
    Wang Yun-Cai
    Zhang Ming-Jiang
    Niu Sheng-Xiao
    Wang An-Bang
    ACTA PHYSICA SINICA, 2008, 57 (08) : 4995 - 5000
  • [42] A 0.13μm CMOS 2.5Gb/s FSK Demodulator Using Injection-Locked Technique
    Wang, Chao-Shiun
    Chu, Kun-Da
    Wang, Chorng-Kuang
    RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2009, : 507 - +
  • [43] 10-Gb/s All-Optical VPN in WDM-PON Using Injection-Locked Fabry-Perot Laser Diodes
    Luo, Yazhi
    Li, Feng
    Liu, Jie
    Gan, Liqing
    Lu, Chao
    Wai, Ping Kong Alexander
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2014, 26 (22) : 2299 - 2302
  • [44] All-optical wavelength conversion at bit rates above 10 Gb/s using semiconductor optical amplifiers
    Joergensen, C
    Danielsen, SL
    Stubkjaer, KE
    Schilling, M
    Daub, K
    Doussiere, P
    Pommerau, F
    Hansen, PB
    Poulsen, HN
    Kloch, A
    Vaa, M
    Mikkelsen, B
    Lach, E
    Laube, G
    Idler, W
    Wunstel, K
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (05) : 1168 - 1180
  • [45] All-optical regeneration using a side-mode injection-locked semiconductor laser
    Kuramoto, A
    Yamashita, S
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) : 1283 - 1287
  • [46] Noise reduction of tunable laser based on mutual injection-locked reflective semiconductor optical amplifiers
    Ku, H. -D.
    Park, C. -S.
    OPTIK, 2014, 125 (09): : 2031 - 2035
  • [47] Evaluation and analysis of optically injection-locked semiconductor laser characteristics for optical complex signal generation
    Talebzadeh, Seyyedeh Ladan
    Yadipour, Reza
    OPTICS CONTINUUM, 2022, 1 (12): : 2549 - 2560
  • [48] Simultaneous repolarization of two 10-Gb/s polarization-scrambled wavelength channels using a mutual-injection-locked laser diode
    Chan, LY
    Chung, WH
    Wai, PKA
    Moses, B
    Tam, HY
    Demokan, MS
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (12) : 1740 - 1742
  • [49] Modeling analysis of all-optical wavelength conversion using injection-locked semiconductor lasers - art. no. 60202O
    Jiang, H
    Wu, KY
    Zhang, Y
    Zhang, HY
    Optoelectronic Materials and Devices for Optical Communications, 2005, 6020 : O202 - O202
  • [50] 40-Gb/s optical clock recovery using an injection-locked optoelectronic oscillator
    Tsuchida, H
    Suzuki, M
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (01) : 211 - 213
12345