SELECTIVE GROWTH OF CUBIC GAN IN SMALL AREAS ON PATTERNED GAAS(100) SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY

The metalorganic vapor phase epitaxy growth of cubic GaN in small areas on SiO2-patterned GaAs substrates has been performed. We have succeeded in selective growth without deposition on the SiO2 mask at temperatures between 620 and 675 degrees C. The crystal quality of cubic GaN has been improved through growth in small areas on patterned GaAs substrates. It is found that the grain size becomes larger and the full width at half maximum of the X-ray diffraction peak of cubic GaN becomes narrower on patterned substrates than on unpatterned ones.