OPTICALLY DETECTED MAGNETIC-RESONANCE OF DEEP CENTERS IN MOLECULAR-BEAM EPITAXY ZNSE-N

Optically detected magnetic resonance has been used to investigate the deep level recombination processes in p-type ZnSe grown by molecular beam epitaxy and doped with nitrogen. In addition to the well-known shallow donor resonance at g = 1.11, an anisotropic deep donor resonance is observed with g = 1.38 and a deep acceptor resonance is detected at g = 2. These results are consistent with the pair recombination processes proposed by us previously where the compensating deep donor was assigned to the V(Se)-Zn-N(Se) complex.