TOTAL IONIZING DOSE EFFECTS ON HIGH-RESOLUTION (12-BIT, 14-BIT) ANALOG-TO-DIGITAL CONVERTERS

被引：15
|
作者：
LEE, CI
RAX, BG
JOHNSTON, AH
机构：
[1] Jet Propulsion Laboratory, California Institute of Technology, Pasadena
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1109/23.340602
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly important for high-accuracy converters. Rebound effects in the thick-oxide MOS devices cause these responses to be different at low and high dose rates, which is a major concern for space applications.
引用
收藏
页码：2459 / 2466
页数：8
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