IMPROVED GAAS-MESFET SIMULATION USING AN ENHANCED SCHOTTKY-BARRIER MODEL

被引：2
|
作者：
MCCARTHY, K
LYDEN, C
KELLY, WM
机构：
来源：
SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 02期
关键词：
D O I：
10.1016/0038-1101(91)90093-E
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：220 / 222
页数：3
相关论文
共 50 条
  • [41] SCHOTTKY-BARRIER OF EPITAXIAL (100)COGA ON GAAS
    KUO, TC
    ARGHAVANI, R
    WANG, KL
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 1191 - 1193
  • [42] GAAS ALLOY TPE SCHOTTKY-BARRIER CONTACTS
    OGAWA, M
    NOZAKI, T
    SHINODA, D
    KAWAMURA, N
    ASANABE, S
    NEC RESEARCH & DEVELOPMENT, 1971, (22): : 1 - &
  • [43] Schottky-barrier enhancement limit for GaAs MESFETs
    Kumar, Y
    Tandon, VK
    Sarkar, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 177 (01): : 311 - 316
  • [44] SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110)
    LUDEKE, R
    CHIANG, TC
    MILLER, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 581 - 587
  • [45] SCHOTTKY-BARRIER AT A MO-GAAS CONTACT
    BATEV, PM
    IVANOVITCH, MD
    KAFEDJIISKA, EI
    SIMEONOV, SS
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1980, 48 (06) : 511 - 517
  • [46] SCHOTTKY-BARRIER ON W-GAAS CONTACT
    BATEV, PM
    IVANOVITCH, MD
    KAFEDIISKA, EI
    SIMEONOV, SS
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02): : 671 - 675
  • [47] SPEED-POWER PROPERTY OF GAAS SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE FET LOGIC
    TOMIZAWA, K
    HASHIZUME, N
    MATSUMOTO, K
    SUZUKI, F
    ELECTRONICS LETTERS, 1981, 17 (21) : 821 - 822
  • [48] Simulation of phosphorene Schottky-barrier transistors
    Wan, Runlai
    Cao, Xi
    Guo, Jing
    APPLIED PHYSICS LETTERS, 2014, 105 (16)
  • [49] SIMULATION OF ULTRA-SMALL GAAS-MESFET USING QUANTUM MOMENT EQUATIONS
    ZHOU, JR
    FERRY, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) : 473 - 478
  • [50] A NEW MODEL FOR THE DUAL-GATE GAAS-MESFET
    LICQURISH, C
    HOWES, MJ
    SNOWDEN, CM
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (10) : 1497 - 1505
12345