IMPROVED GAAS-MESFET SIMULATION USING AN ENHANCED SCHOTTKY-BARRIER MODEL

被引：2

|

作者：

MCCARTHY, K

LYDEN, C

KELLY, WM

机构：

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 02期

关键词：

D O I：

10.1016/0038-1101(91)90093-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

收藏

页码：220 / 222

页数：3

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