RATE LIMITATION AT THE SURFACE FOR IMPURITY DIFFUSION IN SEMICONDUCTORS

被引：56

|

作者：

SMITS, FM

MILLER, RC

机构：

来源：

PHYSICAL REVIEW | 1956年 / 104卷 / 05期

关键词：

D O I：

10.1103/PhysRev.104.1242

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1242 / 1245

页数：4

相关论文

共 50 条

[1] SURFACE DIFFUSION IMPURITY PROFILES IN SEMICONDUCTORS. II. SIMULTANEOUS AND MUTUAL DIFFUSION;
Fistul, V.I.
Sinder, M.I.
[J]. 1600, (17):
[2] SURFACE-DIFFUSION IMPURITY PROFILES IN SEMICONDUCTORS .2. SIMULTANEOUS AND MUTUAL DIFFUSION
FISTUL, VI
SINDER, MI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1278 - 1281
[3] MECHANISM FOR NONLINEAR IMPURITY DIFFUSION IN SEMICONDUCTORS
SNAPIRO, IB
TKACHENKO, NN
[J]. JETP LETTERS, 1989, 50 (03) : 120 - 121
[4] Impurity diffusion through strained semiconductors
Allen, ED
King, JR
Meere, MG
[J]. QUARTERLY JOURNAL OF MECHANICS AND APPLIED MATHEMATICS, 2005, 58 : 615 - 643
[5] SURFACE-DIFFUSION IMPURITY PROFILES IN SEMICONDUCTORS .1. FORMULATION OF THE PROBLEM - CONSECUTIVE DIFFUSION
FISTUL, VI
SINDER, MI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1273 - 1277
[6] Low-threshold limitation of IR radiation in impurity semiconductors
Bagrov, IV
Zhevlakov, AP
Sidorov, AI
Mikheeva, OP
Sudarikov, VV
[J]. JOURNAL OF OPTICAL TECHNOLOGY, 2002, 69 (02) : 77 - 81
[7] VACANCY TRANSIENTS DURING IMPURITY DIFFUSION IN SEMICONDUCTORS
HU, SM
MOCK, MS
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2582 - &
[8] LOCAL CHARGE INFLUENCE ON IMPURITY DIFFUSION IN SEMICONDUCTORS
BUONOMO, A
DIBELLO, C
[J]. ELECTRONICS LETTERS, 1986, 22 (14) : 765 - 767
[9] INFLUENCE OF COMPLEX FORMATION ON IMPURITY DIFFUSION IN SEMICONDUCTORS
VASKIN, VV
USKOV, VA
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (04): : 985 - +
[10] SURFACE-DIFFUSION IMPURITY PROFILES IN SEMICONDUCTORS .3. COMPARISON WITH EXPERIMENTAL RESULTS
FISTUL, VI
SINDER, MI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 498 - 500

← 1 2 3 4 5 →