ROOM-TEMPERATURE IRRADIATION OF SILICON DOPED WITH CARBON

被引：6
|
作者：
DAVIES, G
LIGHTOWLERS, EC
GRIFFITHS, D
WILKES, JG
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1987年 / 2卷 / 08期
关键词：
D O I：
10.1088/0268-1242/2/8/015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：554 / 557
页数：4
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