Room-temperature temperature sensitivity and resolution of doped-silicon microcantilevers

被引：11
|
作者：
Corbin, Elise A. [2 ]
Park, Keunhan [1 ]
King, William P. [2 ]
机构：
[1] Univ Rhode Isl, Dept Mech Engn & Appl Mech, Kingston, RI 02881 USA
[2] Univ Illinois, Dept Engn Sci & Mech, Urbana, IL 61801 USA
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期
关键词：
atomic force microscopy; cantilevers; elemental semiconductors; microsensors; resistance thermometers; resistors; silicon; temperature sensors; FORCE MICROSCOPE CANTILEVERS; SCANNING THERMAL MICROSCOPY; HEATERS; SPECTROSCOPY; FABRICATION; OPERATION; DESIGN; PROBES;
D O I：
10.1063/1.3154567
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An atomic force microscope microcantilever having an integrated solid-state resistor can be used as a heater or a resistive thermometer. The temperature sensitivity and resolution of these cantilevers were investigated under steady and periodic operation near 300 K. Overall, the temperature coefficient of resistance of the cantilever is 0.0029 K-1 at 300 K. When the cantilever is placed under periodic heating conditions the temperature resolution is measured as low as 5 mK. This characterization of heated cantilevers enables precise measurement of small temperature changes, and could improve nanoscale thermal measurements.
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页数：3
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