INFLUENCE OF IONIZING-RADIATION ON THE CONDUCTION PROPERTIES OF ULTRA-THIN SILICA LAYERS

被引：0
|
作者：
SARRABAYROUSE, GJ [1 ]
SALACE, G [1 ]
AASIME, A [1 ]
PETIT, C [1 ]
机构：
[1] FAC SCI REIMS,GRSM,LASSI,F-51062 REIMS,FRANCE
来源：
MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期
关键词：
D O I：
10.1016/0026-2692(94)90044-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of X-ray irradiation on the conduction properties and breakdown of silica layers less than 10 nm thick has been investigated. It has been found that these properties are net drastically affected, and that the X-ray irradiation induces a decrease of the defectiveness, as for much thicker layers.
引用
收藏
页码：583 / 588
页数：6
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