SOME PROPERTIES OF SIO2 FILMS DEPOSITED BY REACTION OF SIH4 WITH WATER VAPOR

被引:19
|
作者
HANETA, Y
NAKANUMA, S
机构
关键词
D O I
10.1143/JJAP.6.1176
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1176 / +
页数:1
相关论文
共 50 条
  • [1] PREPARATION AND PROPERTIES OF SIO2 FILMS DEPOSITED FROM SIH4 AND O2
    HAMMOND, ML
    BOWERS, GM
    TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1968, 242 (03): : 546 - &
  • [2] Electrical properties of SiO2 films with embedded nanoparticles formed by SiH4/O2 chemical vapor deposition
    Rassel, RM
    Kim, T
    Shen, Z
    Campbell, SA
    McMurry, PH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2441 - 2447
  • [3] EFFICIENCY OF THE SIH4 OXIDATION REACTION IN CHEMICAL VAPOR-DEPOSITION OF SIO2-FILMS AT LOW-TEMPERATURE
    COBIANU, C
    PAVELESCU, C
    THIN SOLID FILMS, 1983, 102 (04) : 361 - 366
  • [4] Capillary jet injection of SiH4 in the high density plasma chemical vapor deposition of SiO2
    Botha, R.
    Novikova, T.
    Bulkin, P.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (04): : 849 - 854
  • [5] DOWNSTREAM MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2 USING O-2/SIH4 AND N2O/SIH4 MIXTURES
    DELPUPPO, H
    SINDZINGRE, T
    PECCOUD, L
    DESMAISON, J
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C2): : 421 - 428
  • [6] MECHANICAL STRESSES IN VAPOR DEPOSITED SIO2 FILMS
    ABOAF, JA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (11) : C325 - &
  • [7] Deposition of SiO2 in a SiH4/O2 inductively coupled plasma
    Tong, L. Z.
    26TH SYMPOSIUM ON PLASMA SCIENCES FOR MATERIALS (SPSM26), 2014, 518
  • [8] CVD SIO2 FROM SIH4 AND CO2 IN A VERTICAL REACTOR
    LOESCHER, DH
    MAURIN, JK
    WELLS, VA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C143 - C143
  • [9] A COMPARATIVE-STUDY OF O2/SIH4 AND N2O/SIH4 MIXTURES FOR SIO2 DEPOSITION IN A MICROWAVE AFTERGLOW
    DELPUPPO, H
    DESMAISON, J
    PECCOUD, L
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C3): : 241 - 246