LOW-TEMPERATURE GROWTH OF GEXSI1-X/SI HETEROSTRUCTURES ON SI(100) BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：13
|
作者：
KINOSKY, D
QIAN, R
IRBY, J
HSU, T
ANTHONY, B
BANERJEE, S
TASCH, A
MAGEE, C
GROVE, CL
机构：
[1] EVANS E INC,PLAINSBORO,NJ 08536
[2] MOTOROLA INC,AUSTIN,TX 78721
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期
关键词：
D O I：
10.1063/1.105272
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature growth processes are needed in order to fully exploit the potential of Ge(x)Si1-x/Si heterostructures. Remote plasma-enhanced chemical vapor deposition has been successful for silicon homoepitaxy at substrate temperatures as low as 150-degrees-C. We report the growth of Ge(x)Si1-x/Si heterostructures with values of x between 0.07 and 0.73, and at substrate temperatures of 305 and 450-degrees-C. The films grown at 450-degrees-C have excellent crystallinity, low defect densities, and very abrupt interfaces, while films grown at 305-degrees-C have degraded crystallinity.
引用
收藏
页码：817 / 819
页数：3
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