SIMPLIFIED ANALYSIS OF BODY CONTACT EFFECT FOR MOSFET SOI

被引：17
|
作者：
OMURA, Y
IZUMI, K
机构：
[1] NTT, Atsugi, Jpn
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期
关键词：
SEMICONDUCTOR DEVICES; FIELD EFFECT -- Measurements;
D O I：
10.1109/16.2567
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simplified experimental analysis of the body-contact effect and its impact on drain current reduction is carried out to clarify the relevant parameters for MOSFET/SOI design. In the experiments, body contacts in the source are distributed in a mosaic configuration. The empirical relationship between drain current and the number of body contacts is obtained. The relationship suggests that there must be a sufficient number of body contacts to suppress the kink effect to avoid reduction in drain current.
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页码：1391 / 1393
页数：3
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