EFFECT OF ENERGY-DISTRIBUTION OF INTERFACE STATES ON THE CAPACITANCE AND CONDUCTANCE OF SCHOTTKY-BARRIER AND MIS TUNNEL CONTACTS

被引：3

作者：

RAYCHAUDHURI, B ^{[1
]}

CHATTOPADHYAY, P ^{[1
]}

机构：

[1] UNIV CALCUTTA,UNIV COLL SCI,DEPT ELECTR SCI,92 ACHARYA PRAFULLA CHANDRA RD,CALCUTTA 700009,W BENGAL,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 141卷 / 01期

关键词：

D O I：

10.1002/pssa.2211410141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K71 / K75

页数：5

共 50 条

[1] CONSEQUENCES ON THE SCHOTTKY-BARRIER OF A SPATIAL-DISTRIBUTION OF INTERFACE STATES
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[2] SCHOTTKY-BARRIER ANOMALIES AND INTERFACE STATES
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[4] STUDY OF CLEAVED METAL-INP(N) CONTACTS - SCHOTTKY-BARRIER AND INTERFACE STATES
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[9] THEORY OF CAPACITANCE AND CONDUCTANCE BEHAVIOR OF SCHOTTKY-BARRIER AND CONDUCTING M-I-S DIODES WITH INTERFACE TRAPS
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[10] CHARACTERIZATION OF A DEFECT LAYER AT A SCHOTTKY-BARRIER INTERFACE BY CURRENT AND CAPACITANCE MEASUREMENTS
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