ELECTRON-MOBILITY IN ALXGA1-XAS

被引:18
|
作者
NEUMANN, H [1 ]
FLOHRER, U [1 ]
机构
[1] KARL MARX UNIV,SEKT PHYS,LEIPZIG,EAST GERMANY
来源
关键词
D O I
10.1002/pssa.2210250258
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K145 / K147
页数:3
相关论文
共 50 条
  • [21] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
    DRUMMOND, TJ
    MORKOC, H
    CHO, AY
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
  • [22] INVESTIGATION OF MOCVD GROWTH OF ALXGA1-XAS/GAAS AND ALXGA1-XAS/GAAS/ALXGA1-XAS/GAAS MULTILAYER STRUCTURES WITH HIGH AL CONTENT
    GAO, HK
    YUN, F
    ZHANG, JK
    HOU, X
    GONG, P
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 428 - 433
  • [23] SPATIAL LOCALIZATION AND DIFFUSION OF SI IN DELTA-DOPED GAAS AND ALXGA1-XAS AND ITS APPLICATION TO ELECTRON-MOBILITY OPTIMIZATION IN SELECTIVELY DOPED HETEROSTRUCTURES
    SCHUBERT, EF
    CUNNINGHAM, JE
    CHIU, TH
    STARK, JB
    TELL, B
    TU, CW
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 33 - 40
  • [24] SPATIAL LOCALIZATION AND DIFFUSION OF SI IN DELTA-DOPED GAAS AND ALXGA1-XAS AND ITS APPLICATION TO ELECTRON-MOBILITY OPTIMIZATION IN SELECTIVELY DOPED HETEROSTRUCTURES
    SCHUBERT, EF
    CUNNINGHAM, JE
    CHIU, TH
    STARK, JB
    TELL, B
    TU, CW
    [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 33 - 40
  • [25] Electron clusters in quantum Hall effect in AlxGa1-xAs
    Shrivastava, Keshav N.
    [J]. NATIONAL ACADEMY SCIENCE LETTERS-INDIA, 2011, 34 (3-4): : 137 - 142
  • [26] HOT-ELECTRON INJECTION BY GRADED ALXGA1-XAS
    LONG, AP
    BETON, PH
    KELLY, MJ
    KERR, TM
    [J]. ELECTRONICS LETTERS, 1986, 22 (03) : 130 - 131
  • [27] IMPROVED ELECTRON-MOBILITY BY ALAS SPACER IN ONE-SIDED SELECTIVELY DOPED ALXGA1-XAS/GAAS MULTIPLE QUANTUM-WELL HETEROSTRUCTURES
    PLOOG, K
    FRONIUS, H
    FISCHER, A
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1237 - 1239
  • [28] Compositional dependence of defect mobility and damage buildup in AlxGa1-xAs
    Stonert, A
    Turos, A
    Nowicki, L
    Breeger, B
    Wendler, E
    Wesch, W
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 219 - 223
  • [29] REALIZATION OF HIGH MOBILITY IN INVERTED ALXGA1-XAS/GAAS HETEROJUNCTIONS
    CHO, NM
    KIM, DJ
    MADHUKAR, A
    NEWMAN, PG
    SMITH, DD
    AUCOIN, T
    IAFRATE, GJ
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (24) : 2037 - 2039
  • [30] ELECTRON-MOBILITY IN INXGA1-XAS ALLOYS
    GLICKSMA.M
    ENSTROM, RE
    MITTLEMA.SA
    APPERT, JR
    [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1621 - 1626