MONOLITHICALLY INTEGRATED HBT/MESFET CIRCUIT

被引：3

作者：

ZAMPARDI, PJ ^{[1
]}

BECCUE, SM ^{[1
]}

PEDROTTI, KD ^{[1
]}

PIERSON, RL ^{[1
]}

CHANG, MF ^{[1
]}

WANG, KC ^{[1
]}

CHESKIS, D ^{[1
]}

CHANG, CE ^{[1
]}

ASBECK, PM ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 12期

关键词：

INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; FIELD-EFFECT TRANSISTORS;

D O I：

10.1049/el:19930734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first circuit demonstrated using monolithically integrated GaAlAa/GaAs heterojunction bipolar transistors (HBTs) and metal-semiconductor field effect transistors (MESFETs) is described. The fabrication technology is a natural extension to our baseline HBT technology. The planarity of the device fabrication process allows the MESFETs and HBT, to be closely spaced. The circuit, a CML-DCFL-CML convertor, is an important building block for the future integration of HBT and MESFET circuitry. This circuit consists of HBTs, and enhancement (E) and depletion (D) mode MESFETs. The circuit operated properly at 1 GHz.

引用

页码：1100 / 1102

页数：3

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