QUANTITATIVE STUDY OF MECHANISM RESPONSIBLE FOR HIGH OPERATING VOLTAGE IN II-VI LASER-DIODES

被引：1
|
作者：
SUEMUNE, I
机构：
[1] Research Institute for Electronic Science, Hokkaido University, Sapporo
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)90896-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Current-voltage (I-V) characteristics of 11-VI laser diodes were calculated considering thermionic emission and tunneling processes at metal/p-ZnSe contacts. The physical parameter dependence of the tunneling current, which dominates the I-V characteristics in high voltage regions, especially the dependence on the barrier height and the acceptor concentration, is quantitatively clarified. The relation between the measured low ohmic contact resistance and the high diode voltage for laser operations is discussed. I-V characteristics of ZnSSe p-n diodes grown by metalorganic vapor-phase epitaxy were studied with the present model and the mechanism of the low-voltage operation observed was examined.
引用
收藏
页码：714 / 718
页数：5
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