Degradation in II-VI laser diodes

被引：6
|
作者：
Nakano, K [1 ]
Ishibashi, A [1 ]
机构：
[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 240, Japan
来源：
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词：
ZnMgSSe; laser diode; degradation; recombination enhanced defect reaction;
D O I：
10.4028/www.scientific.net/MSF.258-263.1329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aging studies of II-VI lasers and light emitting diodes show that these devices degrade not catastrophically, but gradually by recombination-enhanced defect reactions at preexisting defects. The activation energy and current dependence of the degradation process in devices were examined. ZnMgSSe-based materials are stable under current injection of at least up to 2 kA/cm(2), about 4 times larger than the current density needed for laser operation. Ways to improve device reliability are also discussed.
引用
收藏
页码：1329 / 1334
页数：6
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