CALCULATION OF THE EXCITON PARAMETERS IN STRESSED QUANTUM-WELL INXGA1-XAS/GAAS STRUCTURES

被引：0
|
作者：
AVRUTSKII, IA
SYCHUGOV, VA
USIEVICH, BA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Analytic expressions obtained in the present paper make it easy to calculate the binding energy of an exciton in a quantum well. The binding energy of an exciton and the spectral position of an exciton peak are calculated for stresses In(x) Ga1-x As/GaAs quantum well structures with well widths in the range 5-100 angstrom and with x up to 0.5. The optimal parameters of a quantum well, ensuring the maximum binding energy of an exciton, are determined as a function of the wavelength corresponding to an exciton peak.
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页码：1074 / 1077
页数：4
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