KINETICS OF STRUCTURAL RELAXATION AND HYDROGEN EVOLUTION FROM PLASMA DEPOSITED SILICON-NITRIDE

被引：46

作者：

BUDHANI, RC

BUNSHAH, RF

FLINN, PA

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

[2] INTEL CORP,SANTA CLARA,CA 95051

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.99495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：284 / 286

页数：3

共 50 条

[1] HYDROGEN EVOLUTION IN ALUMINUM PLASMA DEPOSITED SILICON-NITRIDE LAYERED STRUCTURES
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[2] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
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RAND, MJ
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[3] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
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[4] THE INFLUENCE OF UNDERLYING METALS ON THE HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED SILICON-NITRIDE FILMS
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ENDO, N
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[5] INFLUENCE OF HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED SILICON-NITRIDE ON UNDERLYING ALUMINUM DEFORMATIONS
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[6] DENSIFICATION OF PLASMA DEPOSITED SILICON-NITRIDE FILMS BY HYDROGEN DILUTION
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[7] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE
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[8] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
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[9] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
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[10] EFFECT OF HYDROGEN DILUTION ON THE PROPERTIES AND BONDING IN PLASMA-DEPOSITED SILICON-NITRIDE
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