LOW-THRESHOLD INGAAS/GAAS STRAINED LAYER SINGLE QUANTUM-WELL LASERS WITH SIMPLE RIDGE WAVE-GUIDE STRUCTURE

被引：9
|
作者：
CHAO, CP
HU, SY
LAW, KK
YOUNG, B
MERZ, JL
GOSSARD, AC
机构：
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 11期
关键词：
D O I：
10.1063/1.347473
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Double heterostructure InGaAs-GaAs strained-layer single quantum well ridge waveguide lasers grown by molecular beam epitaxy were fabricated by using in situ laser monitored reactive ion etching to form the ridges. Continuous-wave threshold current as low as 3.5 mA was obtained on a ridge laser diode of 3.3-mu-m wide and 215-mu-m long having cleaved mirrors. The lasing wavelength is at 0.988-mu-m and the measured differential external quantum efficiency is 61%.
引用
收藏
页码：7892 / 7894
页数：3
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