CHARACTERISTICS OF GAAS GRADED-PERIOD DELTA-DOPED SUPERLATTICE

被引：0
|
作者：
LIU, WC
SUN, CY
LOUR, WS
机构：
[1] Natl Chen-Kung Univ, Tainan
来源：
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1991年 / 138卷 / 06期
关键词：
DELTA-DOPED SUPERLATTICE; NEGATIVE DIFFERENTIAL CONDUCTIVITY; AVALANCHE MULTIPLICATION-HYSTERESIS;
D O I：
10.1049/ip-g-2.1991.0104
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the paper, the characteristics of a GaAs graded-period delta-doped superlattice grown by molecular beam epitaxy are studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurs both at 300 K and 77 K. An N-shaped NDC due to the temperature-induced tunnelling effect is observed at 300 K. In addition, a two-state avalanche multiplication process, i.e. a middle quasistable region, is seen at 77 K. Finally, there is an interesting hysteresis phenomenon owing to the trapped holes created by the avalanche multiplications.
引用
收藏
页码：629 / 632
页数：4
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